发明名称 Memory system and data processing method thereof
摘要 A data processing method of a memory system including a flash memory, which includes judging whether data initially read from a selected page of the flash memory is correctable. If the initially read data is judged not to be correctable, the data is newly read from the selected page based upon each of newly determined read voltages. Thereafter, error-free sub-sectors of the newly read data are collected based upon EDC data corresponding to the initially read data. The data of the error-free sub-sectors are then corrected based upon ECC data corresponding to the initially read data.
申请公布号 US8230303(B2) 申请公布日期 2012.07.24
申请号 US20090512097 申请日期 2009.07.30
申请人 CHOI JIN-HYEOK;OH HWASEOK;SONG JONG-UK;SAMSUNG ELECTRONICS CO., LTD. 发明人 CHOI JIN-HYEOK;OH HWASEOK;SONG JONG-UK
分类号 G11C29/00 主分类号 G11C29/00
代理机构 代理人
主权项
地址