| 摘要 |
An impact ionization MOSFET is formed with the offset from the gate to one of the source/drain regions disposed vertically within the device structure rather than horizontally. The semiconductor device comprises a first source/drain region having a first doping level; a second source/drain region having a second doping level and of opposite dopant type to the first source/drain region, the first and second source/drain regions being laterally separated by a silicon-germanium intermediate region having a doping level less than either of the first and second doping levels; a gate electrode electrically insulated from, and disposed over, the intermediate region, the first and second source/drain regions being laterally aligned with the gate electrode; where the entire portion of the first source/drain region that forms a boundary with the intermediate region is separated vertically from the top of the intermediate region.
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