发明名称 |
POLISHING PAD FOR CHEMICAL MECHANICAL POLISHING, PREPARATION METHOD OF THE SAME, AND APPARATUS FOR CMP |
摘要 |
PURPOSE: A CMP polishing pad is provided to minimize phenomenon degrading transparence or forming protrusions, and to easily a detect polishing-finish point. CONSTITUTION: A CMP polishing pad comprises: a pad main body comprising a polymer resin; a transparent window comprising thermosetting or photocurable resin comprising one or more kinds from a group consisting of phenol resin, urea resin, melamine resin, epoxy resin, and polyester resin. A CMP apparatus comprises the CMP polishing pad, a rotatable platen, a supply part supplying polishing slurry to the polishing pad; and a head part accepting a wafer supposed to be polished on the pad.
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申请公布号 |
KR20120081956(A) |
申请公布日期 |
2012.07.20 |
申请号 |
KR20120004005 |
申请日期 |
2012.01.12 |
申请人 |
LG CHEM. LTD. |
发明人 |
TAE, YOUNG JI;AHN, BYEONG IN;YOON, KEONG YEON |
分类号 |
C08J5/14;B24B37/24;C08L101/00;C09K3/14 |
主分类号 |
C08J5/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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