发明名称 POLISHING PAD FOR CHEMICAL MECHANICAL POLISHING, PREPARATION METHOD OF THE SAME, AND APPARATUS FOR CMP
摘要 PURPOSE: A CMP polishing pad is provided to minimize phenomenon degrading transparence or forming protrusions, and to easily a detect polishing-finish point. CONSTITUTION: A CMP polishing pad comprises: a pad main body comprising a polymer resin; a transparent window comprising thermosetting or photocurable resin comprising one or more kinds from a group consisting of phenol resin, urea resin, melamine resin, epoxy resin, and polyester resin. A CMP apparatus comprises the CMP polishing pad, a rotatable platen, a supply part supplying polishing slurry to the polishing pad; and a head part accepting a wafer supposed to be polished on the pad.
申请公布号 KR20120081956(A) 申请公布日期 2012.07.20
申请号 KR20120004005 申请日期 2012.01.12
申请人 LG CHEM. LTD. 发明人 TAE, YOUNG JI;AHN, BYEONG IN;YOON, KEONG YEON
分类号 C08J5/14;B24B37/24;C08L101/00;C09K3/14 主分类号 C08J5/14
代理机构 代理人
主权项
地址