METHOD TO PRODUCE EPITAXIAL FILIFORM NANOCRYSTALS OF SEMICONDUCTORS OF PERMANENT DIAMETER

摘要

FIELD: nanotechnologies. ^ SUBSTANCE: invention relates to the technology of producing semiconductor nanomaterials. The method to produce epitaxial filiform nanocrystals of semiconductors of permanent diameter includes preparation of a semiconductor plate by application of nanodisperse catalyst particles onto its surface with subsequent placement of the specified plate into a growth furnace, heating and deposition of a crystallised substance from a gas phase according to the scheme vapouråÆdrop liquidåÆcrystal, at the same time the catalyst applied on the plate is created from a bicomponent alloy of metal and semiconductor of eutectic composition, and the crystallised substance is deposited from the gas phase under temperature that exceeds the eutectics temperature by the minimum. ^ EFFECT: invention provides for an opportunity to produce epitaxial semiconductor filiform nanocrystals without narrowing initial sections near bases. ^ 4 ex