| 摘要 |
<P>PROBLEM TO BE SOLVED: To improve an aperture ratio of a semiconductor device. <P>SOLUTION: A semiconductor device includes a pixel section having a first thin-film transistor and a driving circuit having a second thin-film transistor on the same substrate. The thin-film transistor in the pixel section includes: a gate electrode layer; a gate insulating layer; an oxide semiconductor layer having a thin region in the periphery thereof; an oxide insulating layer contacting a portion of the oxide semiconductor layer; a source electrode layer and a drain electrode layer; and a pixel electrode layer. The gate electrode layer, the gate insulating layer, the oxide semiconductor layer, the source electrode layer, the drain electrode layer, the oxide insulating layer, and the pixel electrode layer of the first thin-film transistor have transparency. A source electrode layer and a drain electrode layer of the thin-film transistor in the driving circuit are covered with a protective insulating layer, and are composed of a conductive material with lower resistance than that of the source electrode layer and the drain electrode layer of the pixel section. <P>COPYRIGHT: (C)2012,JPO&INPIT |
