| 摘要 |
<P>PROBLEM TO BE SOLVED: To form a silicon nitride film of less etching rate with respect to a HF-based solution without increasing a deposition temperature. <P>SOLUTION: A substrate processing method of forming a thin film on a substrate housed in a processing chamber, comprises a first step of supplying a first processing gas containing a Cl element into the processing chamber, a second step of discharging the first processing gas from the processing chamber by supplying an inert gas into the processing chamber, a third step of creating a thin film on the substrate by supplying a second processing gas into the processing chamber and a fourth step of discharging the second processing gas from the processing chamber by supplying an inert gas into the processing chamber. One cycle of the first step through the fourth step is repeatedly performed predetermined times, and in the second step, the inert gas is continuously supplied to the processing chamber though after the first processing gas being discharged from the processing chamber. <P>COPYRIGHT: (C)2012,JPO&INPIT |
