发明名称 |
SEMICONDUCTOR DEVICE AND SEMICONDUCTOR MEMORY DEVICE |
摘要 |
A memory circuit is included. The memory circuit includes n field-effect transistors (n is a natural number of 2 or more) and n capacitors each including a pair of electrodes. A digital data signal is input to one of a source and a drain of the first field-effect transistor. One of a source and a drain of the k-th field-effect transistor (k is a natural number of greater than or equal to 2 and less than or equal to n) is electrically connected to the other of a source and a drain of the (k−1)-th field-effect transistor. One of the pair of electrodes of the m-th capacitor (m is a natural number of n or less) is electrically connected to the other of a source and a drain of the m-th field-effect transistor of the n field-effect transistors. At least two of the n capacitors have different capacitance values.
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申请公布号 |
US2012182791(A1) |
申请公布日期 |
2012.07.19 |
申请号 |
US201213344935 |
申请日期 |
2012.01.06 |
申请人 |
KOYAMA JUN;YAMAZAKI SHUNPEI;SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
KOYAMA JUN;YAMAZAKI SHUNPEI |
分类号 |
G11C11/24 |
主分类号 |
G11C11/24 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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