| 摘要 |
PURPOSE: A semiconductor device and a manufacturing method thereof are provided to prevent a bridge fail by differently forming the height of a bowing profile between adjacent bottom electrodes. CONSTITUTION: A first storage electrode contact plug(137) is formed on the upper side of a semiconductor substrate. The height of a second storage electrode contact plug(138) is different from the height of the first storage contact plug. A bottom electrode is formed on the upper sides of the first storage electrode contact plug and the second storage electrode contact plug. The first storage electrode contact plug and the second storage electrode contact plug respectively have polysilicon. The first storage electrode contact plug and the second storage electrode contact plug are alternatively arranged. |
