发明名称 |
Light emitting device and method of manufacturing the same |
摘要 |
Provided is a light emitting diode (LED) manufactured by using a wafer bonding method and a method of manufacturing a LED by using a wafer bonding method. The wafer bonding method may include interposing a stress relaxation layer formed of a metal between a semiconductor layer and a bonding substrate. When the stress relaxation layer is used, stress between the bonding substrate and a growth substrate may be offset due to the flexibility of metal, and accordingly, bending or warpage of the bonding substrate may be reduced or prevented. |
申请公布号 |
US8222663(B2) |
申请公布日期 |
2012.07.17 |
申请号 |
US20090458797 |
申请日期 |
2009.07.23 |
申请人 |
KIM KYOUNG-KOOK;CHAE SU-HEE;PARK YOUNG-SOO;KIM TAEK;YANG MOON-SEUNG;JEONG HYUNG-SU;PARK JAE-CHUL;KIM JUN-YOUN;SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM KYOUNG-KOOK;CHAE SU-HEE;PARK YOUNG-SOO;KIM TAEK;YANG MOON-SEUNG;JEONG HYUNG-SU;PARK JAE-CHUL;KIM JUN-YOUN |
分类号 |
H01L33/00 |
主分类号 |
H01L33/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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