METHOD FOR FORMING IDENTIFICATION MARKS ON SILICON CARBIDE SINGLE CRYSTAL SUBSTRATE, AND SILICON CARBIDE SINGLE CRYSTAL SUBSTRATE

摘要

This method for forming identification marks on a silicon carbide single crystal substrate comprises a step (a) for forming, on a main surface of a silicon carbide single crystal substrate, identification marks consisting of one or more grooves formed by scanning the main surface of the silicon carbide single crystal substrate using a laser beam at a first energy density at which grooves are formed in the main surface of the silicon carbide single crystal substrate and a step (b) for scanning inside the grooves formed on the main surface of the silicon carbide single crystal substrate using the laser beam at a second energy density that is lower than the first energy density.