| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a silicon wafer formed by CZ method, which is suitably used in IGBT, and a manufacturing method of the wafer. <P>SOLUTION: A manufacturing method of a silicon wafer for IGBT is adopted in which a silicon ingot having interstitial oxygen concentration [Oi] at 7.0×10<SP POS="POST">17</SP>atoms/cm<SP POS="POST">3</SP>or less is formed by Czochralski method, neutron beam is applied to the silicon ingot to dope phosphorous and wafer is cut out, oxidizing atmosphere annealing is performed to the wafer in atmosphere containing at least oxygen at temperature T(°C) that satisfies a prescribed formula, and the wafer has a polysilicon layer or a strained layer on one side of the wafer. <P>COPYRIGHT: (C)2012,JPO&INPIT |
