发明名称 SEMICONDUCTOR MEMORY DEVICE AND STORAGE METHOD
摘要 <P>PROBLEM TO BE SOLVED: To reduce time required to level out value deviations in write-in data. <P>SOLUTION: A semiconductor memory device comprises: a memory array having a plurality of memory cells being stored with data representing either a first value or a second value; a transferred data determining section for determining which of the number of first values and the number of second values is greater in the data stored in the memory array; a write-in data determining section for determining which of the first value and the second value contained in data being written into the memory array is greater in number at each timing when a data amount of data input from outside reaches a write-in unit into the memory array; and a write-in data selecting section for selecting either write-in data, each bit value of which is inverted according to a determination result of the transferred data determining section and a determination result of the write-in data determining section, or write-in data so as to store selected write-in data in the memory array. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2012133831(A) 申请公布日期 2012.07.12
申请号 JP20100283125 申请日期 2010.12.20
申请人 SAMSUNG YOKOHAMA RESEARCH INSTITUTE CO LTD 发明人 SONODA MASATOSHI
分类号 G11C16/02;G11C16/06 主分类号 G11C16/02
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