发明名称 |
Semiconductor Device and Method of Forming Vertical Interconnect Structure in Substrate for IPD and Baseband Circuit Separated by High-Resistivity Molding Compound |
摘要 |
A semiconductor device is made with a conductive via formed through a top-side of the substrate. The conductive via extends vertically through less than a thickness of the substrate. An integrated passive device (IPD) is formed over the substrate. A plurality of first conductive pillars is formed over the first IPD. A first semiconductor die is mounted over the substrate. An encapsulant is formed around the first conductive pillars and first semiconductor die. A second IPD is formed over the encapsulant. An interconnect structure is formed over the second IPD. The interconnect structure operates as a heat sink. A portion of a back-side of the substrate is removed to expose the first conductive via. A second semiconductor die is mounted to the back-side of the substrate. The second semiconductor die is electrically connected to the first IPD and first semiconductor die through the conductive via. |
申请公布号 |
US2012175784(A1) |
申请公布日期 |
2012.07.12 |
申请号 |
US201213424484 |
申请日期 |
2012.03.20 |
申请人 |
STATS CHIPPAC, LTD. |
发明人 |
LIN YAOJIAN;FANG JIANMIN;CHEN KANG;CAO HAIJING |
分类号 |
H01L23/538 |
主分类号 |
H01L23/538 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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