| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a device for producing a silicon carbide single crystal capable of reducing defects occurring during crystal growth, in particular an early stage of the crystal growth, when producing a silicon carbide single crystal by an improved Rayleigh method for producing a high-quality silicon carbide single crystal with a low defect density. <P>SOLUTION: The device for producing a silicon carbide single crystal ingot based on a sublimation recrystallization method by using a crucible having an axis of symmetry and a seed crystal having an axis of symmetry performs: heating having a non-axisymmetric temperature distribution to the axis of symmetry of the seed crystal; and crystal growth while turning the seed crystal and a growing crystal around the axis of symmetry of the seed crystal in the non-axisymmetric temperature distribution. The device can suppress occurrence of crystal defects during the crystal growth and produce a high-quality silicon carbide single crystal. <P>COPYRIGHT: (C)2012,JPO&INPIT |
