| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an active matrix type display device with a pixel structure in which a high opening ratio is achieved without increasing the number of masks and steps by optimizing the arrangement of a pixel electrode, a gate wire, and a source wire formed in a pixel portion. <P>SOLUTION: An active matrix type display device comprises: a gate electrode and a source wire on an insulation surface; a first insulation layer on the gate electrode and the source wire; a semiconductor layer on the first insulation film; a second insulation layer on the semiconductor film; a gate wire connected to the gate electrode on the second insulation layer; a connection electrode connecting the source electrode and the semiconductor layer; and a pixel electrode connected to the semiconductor layer. <P>COPYRIGHT: (C)2012,JPO&INPIT |
