发明名称
摘要 <p>A semiconductor device includes a multilayer wiring substrate and a double-sided multi-electrode chip. The double-sided multi-electrode chip includes a semiconductor chip and has multiple electrodes on both sides of the semiconductor chip. The double-sided multi-electrode chip is embedded in the multilayer wiring substrate in such a manner that the double-sided multi-electrode chip is not exposed outside the multilayer wiring substrate. The electrodes of the double-sided multi-electrode chip are connected to wiring layers of the multilayer wiring substrate.</p>
申请公布号 JP4973761(B2) 申请公布日期 2012.07.11
申请号 JP20100112430 申请日期 2010.05.14
申请人 发明人
分类号 H01L23/12;H01L21/28;H01L23/36;H01L29/41;H05K3/46 主分类号 H01L23/12
代理机构 代理人
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