发明名称 |
SEMICONDUCTOR DEVICE |
摘要 |
<p>The outer surface of a wide-gap semiconductor device is coated with a synthetic polymer compound containing one or more silicon-containing polymer having a bridged structure formed by a siloxane (Si—O—Si bond structure). The synthetic polymer compound may include, for example, a silicon-containing polymer which has one or more reactive groups (A′) selected from Si—R1, Si—O—R2 and Si—R3—OCOC(R4)═CH2, has a bridged structure formed by an Si—O—Si bond in one or more locations, and contains components having weight average molecular weights of not more than 1000 in an amount of 20% or less by weight.</p> |
申请公布号 |
EP1801871(B1) |
申请公布日期 |
2012.07.11 |
申请号 |
EP20050782201 |
申请日期 |
2005.09.06 |
申请人 |
THE KANSAI ELECTRIC POWER CO., INC.;ADEKA CORPORATION |
发明人 |
SUGAWARA, Y.;SHOJI, YOSHIKAZU |
分类号 |
H01L23/29;C08L83/05;C08L83/07 |
主分类号 |
H01L23/29 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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