发明名称 |
GaN light emitting diode and method for increasing light extraction on GaN light emitting diode via sapphire shaping |
摘要 |
A method for enhancing light extraction efficiency of GaN light emitting diodes is disclosed. By cutting off a portion from each end of bottom of a sapphire substrate or forming depressions on the bottom of the substrate and forming a reflector, light beams emitted to side walls of the substrate can be guided to the light emitting diodes. |
申请公布号 |
US8217488(B2) |
申请公布日期 |
2012.07.10 |
申请号 |
US20100838557 |
申请日期 |
2010.07.19 |
申请人 |
CHEN SHIUE-LUNG;FENG JENG-GUO;CHEN JANG-HO;CHANG JEAN CHING-HWA;WALSIN LIHWA CORPORATION |
发明人 |
CHEN SHIUE-LUNG;FENG JENG-GUO;CHEN JANG-HO;CHANG JEAN CHING-HWA |
分类号 |
H01L21/00 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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