| 摘要 |
<P>PROBLEM TO BE SOLVED: To optimize plasma processing conditions by attaining a high selection ratio in a method of performing plasma processing for a plurality of sapphire substrates which are conveyed while being housed in a tray. <P>SOLUTION: While housing sapphire substrates in a plurality of substrate housing sections of a tray, plasma processing is performed for respective sapphire substrates by using a gas principally comprising BCl<SB POS="POST">3</SB>, and a structure of protrusions and recesses is formed on the surface of respective sapphire substrates. In such a plasma processing process, plasma processing is performed for the sapphire substrate while arranging an organic material on the surface of a tray. O or Cl generated from the sapphire substrate during plasma processing are made to react on the organic components generated from the organic material, and a high selection ratio can be obtained by increasing the ratio of the organic components in the process atmosphere. <P>COPYRIGHT: (C)2012,JPO&INPIT |
