| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an active matrix substrate which can reduce an optical leakage current of TFT and be manufactured in less photolithography steps than in the prior art. <P>SOLUTION: In an active matrix substrate 201, a plurality pairs of a thin film transistor 101 in which a gate electrode 2, a gate insulation film 6 covering the gate electrode 2, a drain electrode 9 and a source electrode 11 formed at intervals, and at least one layer of a semiconductor film 21 including a channel layer sequentially formed from the side of an insulating substrate 1, and a pixel electrode 10 are formed in an array on the insulating substrate 1. The drain electrode 9 and the source electrode 11 each has a laminate structure in which a translucent conductive film EM2 and a non-translucent conductive film EM3 are sequentially laminated from the side of the substrate 1. Moreover, the translucent conductive film EM2 and/or the non-translucent conductive film EM3 of the drain electrode 9 is extended and the pixel electrode 10 is formed by the extended portion. <P>COPYRIGHT: (C)2012,JPO&INPIT |
