Method of fabricating semiconductor device including nonvolatile memory and peripheral circuit

摘要

A fabrication method of the present invention includes the following steps: A step of forming gate electrodes in a logic circuit region; a step of forming first and second protective insulating layers in the logic circuit region; a step of forming a first gate insulating layer and a word gate layer in a memory region; a step of forming a second gate insulating layer on a semiconductor substrate and forming side insulating layers on both sides of the word gate layer in the memory region; a step of anisotropically etching the second conductive layer, thereby forming control gates in the shape of sidewalls and a conductive layer continuous with the control gates in regions in which common contact sections are formed; a step of removing the first and second protective insulating layers; and a step of forming impurity layers which form either a source or drain.