发明名称 |
CVD APPARATUS AND METHOD OF FORMING SEMICONDUCTOR SUPERLATTICE STRUCTURE USING THE SAME |
摘要 |
Provided is a chemical vapor deposition (CVD) apparatus, including: a reaction chamber including an inner pipe having an internal space, and an external pipe configured to cover the inner pipe so as to maintain a sealing state thereof; a wafer holder disposed within the inner pipe and receiving a plurality of wafers stacked therein; and a gas supplier including at least one stem pipe disposed at the outside of the reaction chamber so as to supply a reactive gas thereto, a plurality of branch pipes connected to the stem pipe to introduce the reactive gas from the outside of the reaction chamber into the reaction chamber, and a plurality of spray nozzles provided with the branch pipes to spray the reactive gas to the plurality of respective wafers. |
申请公布号 |
US2012171815(A1) |
申请公布日期 |
2012.07.05 |
申请号 |
US201113276729 |
申请日期 |
2011.10.19 |
申请人 |
MAENG JONG SUN;KIM KI SUNG;KIM BUM JOON;YOON SUK HO;RYU HYUN SEOK;KIM SUNG TAE |
发明人 |
MAENG JONG SUN;KIM KI SUNG;KIM BUM JOON;YOON SUK HO;RYU HYUN SEOK;KIM SUNG TAE |
分类号 |
H01L21/50;C23C16/455;C23C16/458 |
主分类号 |
H01L21/50 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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