发明名称 |
NONVOLATILE MEMORY DEVICES |
摘要 |
A nonvolatile memory device includes a string selection transistor, a plurality of memory cell transistors, and a ground selection transistor electrically connected in series to the string selection transistor and to the pluralities of memory cell transistors. First impurity layers are formed at boundaries of the channels and the source/drain regions of the memory cell transistors. The first impurity layers are doped with opposite conductivity type impurities relative to the source/drain regions of the memory cell transistors. Second impurity layers are formed at boundaries between a channel and a drain region of the string selection transistor and between a channel and a source region of the ground selection transistor. The second impurity layers are doped with the same conductivity type impurities as the first impurity layers and have a higher impurity concentration than the first impurity layers. |
申请公布号 |
US2012168852(A1) |
申请公布日期 |
2012.07.05 |
申请号 |
US201213357350 |
申请日期 |
2012.01.24 |
申请人 |
LEE CHANG-HYUN;CHOI JUNG-DAL;SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE CHANG-HYUN;CHOI JUNG-DAL |
分类号 |
H01L29/792;H01L21/336;H01L29/76 |
主分类号 |
H01L29/792 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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