发明名称 |
METHODS TO ADJUST THRESHOLD VOLTAGE IN SEMICONDUCTOR DEVICES |
摘要 |
Methods for forming a device on a substrate are provided herein. In some embodiments, a method of forming a device on a substrate may include providing a substrate having a partially fabricated first device disposed on the substrate, the first device including a first film stack comprising a first dielectric layer and a first high-k dielectric layer disposed atop the first dielectric layer; depositing a first metal layer atop the first film stack; and modifying a first upper surface of the first metal layer to adjust a first threshold voltage of the first device, wherein the modification of the first upper surface does not extend through to a first lower surface of the first metal layer. |
申请公布号 |
US2012171855(A1) |
申请公布日期 |
2012.07.05 |
申请号 |
US201113190012 |
申请日期 |
2011.07.25 |
申请人 |
WARD MICHAEL G.;PEIDOUS IGOR V.;CHIANG SUNNY;TA YEN B.;DARLAK ANDREW;PORSHNEV PETER I.;SRINIVASAN SWAMINATHAN;APPLIED MATERIALS, INC. |
发明人 |
WARD MICHAEL G.;PEIDOUS IGOR V.;CHIANG SUNNY;TA YEN B.;DARLAK ANDREW;PORSHNEV PETER I.;SRINIVASAN SWAMINATHAN |
分类号 |
H01L21/28 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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