| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device which maintains excellent connectivity among solder bumps and inhibits a void generating in the solder bump after melting. <P>SOLUTION: A first substrate 2 having a first solder bump 1 and a second substrate 4 having a second solder bump 3 are laminated with the solder bumps 1, 3 being temporarily fixed to each other, and subsequently located in a furnace. After an inert gas is introduced into the furnace, a temperature of the furnace is raised to a temperature range over a melting temperature of the solder bumps 1, 3. The inert gas is discharged to create a reduced-pressure atmosphere with the temperature of the furnace being kept in the temperature range over the melting temperature of the solder bumps 1, 3. Thereafter, the melted first solder bump 1 and second solder bump 3 are integrated and bonded while removing an oxide film existing on surfaces of the first and second solder bumps 1, 3 by introduction of a carboxylic acid gas into the furnace. <P>COPYRIGHT: (C)2012,JPO&INPIT |
