3-DIMENSIONAL RESISTANCE CHANGE MEMORY DEVICE, RESISTANCE CHANGE MEMORY DEVICE ARRAY, AND ELECTRONIC PRODUCT INCLUDING THE DEVICE

摘要

PURPOSE: A 3D resistance change memory device, a resistance change memory device array including the same, and an electronic product are provided to improve integration by forming a plurality of variable resistors in a unit cell. CONSTITUTION: A first bit line is arranged on a substrate(100) in one direction. A word line crosses the first bit line. A lower cross point variable resistor is located between a pair of the first bit lines and the word line. A conductive pillar is located in a contact hole to expose the sidewall of the word line and the bit line. A sidewall variable resistance material layer(SRL) surrounding the conductive pillar is located in the contact hole.