发明名称 |
METHODS FOR CONTINUOUSLY CRYSTALLIZING A SILICON AND SYSTEM THEREOF |
摘要 |
PURPOSE: A method and system for continuously crystallizing silicon are provided to prevent the stop of a process due to the stop of a vacuum furnace by operating a plurality of directional growth furnace around the vacuum furnace. CONSTITUTION: A crucible is inputted to a first congelation furnace(S11). The crucible is preheated(S12). A vacuum furnace and the first congelation furnace are matched with a nitrogen atmosphere(S13). The melt silicon is outputted from the crucible of a first growth furnace(S14). The crucible is transferred by using a conveyor belt(S15). The silicon is grown in a second congelation furnace(S16). The silicon is grown in a third congelation furnace(S17).
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申请公布号 |
KR20120072878(A) |
申请公布日期 |
2012.07.04 |
申请号 |
KR20100134799 |
申请日期 |
2010.12.24 |
申请人 |
MERIDIAN SOLAR & DISPLAY CO., LTD. |
发明人 |
PIAO GUANGZHU |
分类号 |
C30B11/00;C30B29/06;H01L21/02 |
主分类号 |
C30B11/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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