发明名称 |
Nonvolatile semiconductor flash memory |
摘要 |
Two diffusion layers are provided in an element area. A tunnel insulating film is provided on the surface of the element area between the two diffusion layers. A charge storage layer is provided on the tunnel insulating film. A first insulator provided on the upper surface of the charge storage layer. An inter-electrode insulating film provided on the first insulator, on the side surface of the charge storage layer in a first direction and on the isolation insulating film. And a control gate electrode extends in the first direction and covers the charge storage layer via the first insulator and the inter-electrode insulating film. The first insulator is thicker than the inter-electrode insulating film, and the inter-electrode insulating film has a first slit on the first insulator. |
申请公布号 |
US8212308(B2) |
申请公布日期 |
2012.07.03 |
申请号 |
US20090618058 |
申请日期 |
2009.11.13 |
申请人 |
NISHIHARA KIYOHITO;ARAI FUMITAKA;KABUSHIKI KAISHA TOSHIBA |
发明人 |
NISHIHARA KIYOHITO;ARAI FUMITAKA |
分类号 |
H01L29/788 |
主分类号 |
H01L29/788 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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