| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a planarization method of a hard brittle wafer in which the processing speed of a wafer, the surface roughness of a wafer and the magnitude of processing distortion can be controlled, and thereby the number of steps of total planarization is reduced and the total planarization time can be shortened while reducing the cost. <P>SOLUTION: Out of the surface and rear surface of a sliced hard brittle wafer, at least the surface is subjected to rough planarization by blasting by performing gas injection only of abrasive grains. Thereafter, finish polishing is performed of the surface of the hard brittle wafer subjected to rough planarization. The processing speed of a wafer, the surface roughness of a wafer and the magnitude of processing distortion can thereby be controlled. Consequently, the number of steps of total planarization is reduced, and the total planarization time can be shortened while reducing the cost. <P>COPYRIGHT: (C)2012,JPO&INPIT |
