| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a plasma etching method which allows the formation of a fine surface structure on a surface of amorphous TiO<SB POS="POST">2</SB>. <P>SOLUTION: A plasma etching method according to an embodiment of the invention comprises, upon etching amorphous TiO<SB POS="POST">2</SB>, a first etching step where a radical reaction is dominant; and a second etching step where an ion irradiation is dominant. In an initial stage of etching, the first etching step in which a relatively high etching pressure is set is conducted to isotropically etch an opening region of a mask pattern. Subsequently, the second etching step is conducted with a lower etching pressure to etch the amorphous TiO<SB POS="POST">2</SB>in a direction perpendicular to its surface. Thus, an etching pattern corresponding to the mask pattern can be formed with high accuracy, and therefore a surface structure having excellent shape characteristics can be formed. <P>COPYRIGHT: (C)2012,JPO&INPIT |
