SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME

摘要

Provided is a silicon carbide semiconductor device that has an SBD for measuring the temperature of a silicon carbide semiconductor element. The silicon carbide semiconductor device (1a) is provided with a MOSFET unit (3a) formed on a silicon carbide epitaxial substrate (11), and an SBD unit (2) for measuring the temperature of the MOSFET unit (3a), wherein the SBD unit (2) has an n-type cathode region (12) in a surface layer section of a silicon carbide drift layer (8); an anode titanium electrode (27a) formed on the cathode region (12), the anode titanium electrode serving as a Schottky electrode; a cathode contact region (16) formed on the surface layer section of the silicon carbide drift layer (8) so as to be in contact with the cathode region (12), the cathode contact region having a higher n-type concentration than that of the cathode region (12); a cathode ohmic electrode (26b) formed on the cathode contact region (16); and a p-type first well region (13) formed so as to surround the periphery of the cathode region (12) and the cathode contact region (16) in the silicon carbide drift layer (8).