发明名称 |
Gate-All-Around Integrated Circuit Devices and Methods of Manufacturing the Same |
摘要 |
Gate-all-around integrated circuit devices include first and second source/drain regions on an active area of an integrated circuit substrate. The first and second source/drain regions form p-n rectifying junctions with the active area. A channel region extends between the first and second source/drain regions. An insulated gate electrode surrounds the channel region.
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申请公布号 |
US2012161247(A1) |
申请公布日期 |
2012.06.28 |
申请号 |
US201213411699 |
申请日期 |
2012.03.05 |
申请人 |
YUN EUN-JUNG;LEE SUNG-YUNG;KIM MIN-SANG;KIM SUNG-MIN |
发明人 |
YUN EUN-JUNG;LEE SUNG-YUNG;KIM MIN-SANG;KIM SUNG-MIN |
分类号 |
H01L27/088;H01L21/336 |
主分类号 |
H01L27/088 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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