发明名称 SEMICONDUCTOR STRUCTURE AND METHOD FOR ITS PRODUCTION
摘要 The present invention relates to a semiconductor structure and a method for its production, the semiconductor structure comprising at least one conductor region 9 and at least two semiconductor regions (30,40), which semiconductor regions are partly separated by the at least one conductor region. The at least one conductor region comprises openings (22) extending between the semiconductor regions which are partly separated by the respective conductor region. The semiconductor regions comprise at least one organic semiconductor material having a specific HOMO energy level, in particular a DPP polymer. The conductor region comprises a conductive material having a specific work function, said combination of specific energy level and work function allowing for a simple preparation of the conductive region. The invention further relates to a method for providing such a semiconductor structure.
申请公布号 WO2012084757(A1) 申请公布日期 2012.06.28
申请号 WO2011EP73159 申请日期 2011.12.19
申请人 BASF SE;MUSTONEN, TERO;PRETOT, ROGER;HASSINEN, TOMI 发明人 MUSTONEN, TERO;PRETOT, ROGER;HASSINEN, TOMI
分类号 H01L51/05 主分类号 H01L51/05
代理机构 代理人
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