METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SUBSTRATE PROCESSING APPARATUS

摘要

PURPOSE: A method for manufacturing a semiconductor device and a substrate processing device are provided to obtain the uniformity of oxidizing power by supplying O2 gas and H2 gas from a nozzle to a processing chamber. CONSTITUTION: A heater(207) heats a substrate in a processing container. A source gas supply system supplies source gas including a preset element to the processing container. An oxygen containing gas supply system supplies gas with oxygen to the processing container. A hydrogen containing gas supply system supplies gas with hydrogen to the processing container. A pressure control unit controls the pressure of the processing container.