CAPACITOR WITH RECESSED PLATE PORTION FOR DYNAMIC RANDOM ACCESS MEMORY (DRAM) AND METHOD TO FORM THE SAME

摘要

A capacitor includes a trench disposed in a first dielectric layer disposed above a substrate. A first metal plate is disposed along the bottom and sidewalls of the trench. A second dielectric layer is disposed on and conformal with the first metal plate. A portion of the first metal plate directly adjacent to the second dielectric layer is recessed relative to the sidewalls of the second dielectric layer. A second metal plate is disposed on and conformal with the second dielectric layer. A portion of the second metal plate directly adjacent to the second dielectric layer is recessed relative to the sidewalls of the second dielectric layer. A third dielectric layer is disposed above the first metal plate, the second dielectric layer, and the second metal plate, and disposed between the first metal plate and the second dielectric layer and between the second metal plate and the second dielectric layer.