| 摘要 |
PURPOSE: A semiconductor memory device is provided to improve an operation speed by shortening data output time from an inversion output terminal and an output terminal of a page buffer to a global word line. CONSTITUTION: The first and second page buffer groups are provided. A connection circuit(330A) connects a page buffer of the first page buffer group to a first local input and output line and a first local input and output inversion line or connects a page buffer of the second page buffer group to a second local input and output line and a second local input and output inversion line. A sense amplifier circuit(340A) outputs the data of the selected page buffer to a global input and output line by sensing a voltage difference between the first local input and output line and the first local input and output inversion line or a voltage difference between the second local input and output line and the second local input and output inversion line.
|
