发明名称 A PRECHARGING CIRCUIT AND A SEMICONDUCTOR MEMORY DEVICE INCLUDING THE SAME
摘要 PURPOSE: A precharging circuit and a semiconductor memory device including the same are provided to minimize current consumption by a precharging operation using a bit line precharge voltage in a write operation mode. CONSTITUTION: A selective voltage provider(242) selectively provides a first voltage and a second voltage in response to an operation mode signal. The second voltage is lower than the first voltage. A precharging unit(244) precharges an input and output line pair with the voltage provided from a voltage selection provider in response to a precharge control signal.
申请公布号 KR20120068218(A) 申请公布日期 2012.06.27
申请号 KR20100129746 申请日期 2010.12.17
申请人 SK HYNIX INC. 发明人 KIM, SEUNG BONG
分类号 G11C5/14;G11C11/4074 主分类号 G11C5/14
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