| 摘要 |
A system and method to manufacture magnetic random access memory is disclosed. In a particular embodiment, a method of making a magnetic tunnel junction memory system includes forming a portion of a metal layer into a source line having a substantially rectilinear portion. The method also includes coupling the source line, at the substantially rectilinear portion, to a first transistor using a first via. The first transistor is configured to supply a first current received from the source line to a first magnetic tunnel junction device. The method includes coupling the source line to a second transistor using a second via, where the second transistor is configured to supply a second current received from the source line to a second magnetic tunnel junction device. |
