| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a group Ill-nitride/substrate structure formed by a method for obtaining the group Ill-nitride, e.g. GaN layer with good crystal quality and to provide a semiconductor device comprising at least one such structure. <P>SOLUTION: The present invention provides the method for depositing or growing the group Ill-nitride layer, e.g. GaN layer 5, on a substrate 1, the substrate 1 comprising at least a Ge surface 3, preferably with hexagonal symmetry. The method comprises steps of: heating the substrate 1 to a nitridation temperature between 400°C and 940°C while exposing the substrate 1 to a nitrogen gas flow; and subsequently depositing the group Ill-nitride, e.g. GaN layer 5, onto the Ge surface 3 at a deposition temperature between 100°C and 940°C. <P>COPYRIGHT: (C)2012,JPO&INPIT |
