| 摘要 |
<P>PROBLEM TO BE SOLVED: To improve a readout margin by performing readout operation at a high speed. <P>SOLUTION: A nonvolatile semiconductor memory includes: a regular sector which has a pair of memory areas each including the specific number of regular bit lines and the specific number of regular word lines connected to a plurality of nonvolatile regular memory cells, respectively; a pair of main bit lines; a switch which is arranged between the pair of memory areas, and connects regular bit lines of the one and the other memory areas to one and the other main bit lines, respectively; a reference sector which includes a reference memory cell, a reference bit line, and a reference word line; a reference switch which connects the reference bit line to a main bit line different a main bit line connected to the regular memory cell from which data is read out during readout operation; and a regular sense amplifier which differentially amplifies the voltage difference between the main bit lines. <P>COPYRIGHT: (C)2012,JPO&INPIT |
