SOLID STATE IMAGING DEVICE, MANUFACTURING METHOD THEREOF, AND ELECTRONIC INFORMATION APPARATUS

摘要

PROBLEM TO BE SOLVED: To improve sensitivity of an FDA by restraining parasitic capacitance to each gate.

SOLUTION: A cavity is provided at a groove part 2a of a semiconductor substrate 8 around a gate electrode 3 of an SF transistor 4 at a portion overlaid with a region 3a directly connected to an FD part 2. The groove part 2a is provided on the semiconductor substrate 8 on both sides and a tip side of the gate electrode 3 around a plane view region 3a of the gate electrode 3. Even when the groove part 2a is a cavity, and even when the groove 2a is embedded with an interlayer film with a lower dielectric constant than that of an oxide film, parasitic capacitance of the gate electrode 3 of the SF transistor 4 can be reduced, so as to improve sensitivity of the FDA.

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