发明名称 |
MAGNETIC RANDOM ACCESS MEMORY CELLS HAVING IMPROVED SIZE AND SHAPE CHARACTERISTICS |
摘要 |
A manufacturing method to form a memory device includes: (1) forming a dielectric layer adjacent to a magnetic stack; (2) forming an opening in the dielectric layer; (3) applying a hard mask material adjacent to the dielectric layer to form a pillar disposed in the opening of the dielectric layer; and (4) using the pillar as a hard mask, patterning the magnetic stack to form a MRAM cell. |
申请公布号 |
WO2012082640(A2) |
申请公布日期 |
2012.06.21 |
申请号 |
WO2011US64457 |
申请日期 |
2011.12.12 |
申请人 |
CROCUS TECHNOLOGY INC.;LEVI, AMITAY;BEERY, DAFNA |
发明人 |
LEVI, AMITAY;BEERY, DAFNA |
分类号 |
G11C11/15;H01L21/8247;H01L27/115 |
主分类号 |
G11C11/15 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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