COMPOUND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a compound semiconductor device capable of further reducing occurrence of cracks in a compound semiconductor layer and to provide a method of manufacturing the same.

SOLUTION: A compound semiconductor device comprises: a substrate 1; an initial layer 2 formed on the substrate 1; and a core layer 3 that is formed on the initial layer 2 and contains a group III-V compound semiconductor. The initial layer 2 is formed as a layer composed of a group III element of the group III-V compound semiconductor contained in the core layer 3.

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