发明名称 SEMICONDUCTOR MEMORY APPARATUS HAVING A PRE-DISCHARGING FUNCTION, SEMICONDUCTOR INTEGRATED CIRCUIT HAVING THE SAME, AND METHOD FOR DRIVING THE SAME
摘要 A semiconductor memory apparatus includes a bit line coupled to a plurality of memory cells, a discharge controller configured to generate a bit line discharge signal to pre-discharge the bit line before the memory cells are activated, and a bit line discharge block coupled to the bit line and configured to discharge the bit line in response to the bit line discharge signal.
申请公布号 US2012155204(A1) 申请公布日期 2012.06.21
申请号 US201113219627 申请日期 2011.08.27
申请人 LEE HYUN JOO;YOON HYUCK SOO;HYNIX SEMICONDUCTOR INC. 发明人 LEE HYUN JOO;YOON HYUCK SOO
分类号 G11C7/12 主分类号 G11C7/12
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