| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a plasma processing system arranged so that damage to the inside of a matching device can be avoided. <P>SOLUTION: The plasma processing system includes: a high-frequency power source 10; a load 30 to which an electric power from the high-frequency power source is applied; a process chamber 40 in which plasma is generated by high frequency discharge caused by the electric power applied to the load from the high-frequency power source; a matching device 20 having components which include one or more variable reactances (C1, C2) for performing impedance matching between the high-frequency power source and the load, and input and output terminals; calculation means 27 provided in the matching device for calculating, based on the reactance value of each component, a limit value up to which an electric power can be applied to the matching device from the high-frequency power source; and a controller 50 which receives the limit value from the calculation means and issues an instruction on a target value of the output to the load from the high-frequency power source, and which controls the high-frequency power source to reduce or stop the output thereof with the target value exceeding the limit value. <P>COPYRIGHT: (C)2012,JPO&INPIT |
