| 摘要 |
<P>PROBLEM TO BE SOLVED: To restrain damage accompanied with cleavage of a semiconductor wafer. <P>SOLUTION: This semiconductor device manufacturing method comprises: a step for forming a connection layer 42 made of metal or resin to cover at least a part of a first boundary line 22a which is a boundary line of a first region 20A and a second region 20B, and at least a part of a second boundary line 22b which is a boundary line of the second region 20B and a third region 20C, on a rear side of a semiconductor substrate 20 having the first region 20A, the second region 20B adjacent to the first region 20A and the third region 20C adjacent to the second region 20B; a step for dividing the substrate into the first region 20A and the second region 20B by cleavage by applying a force along the first boundary line 22a from a rear side of the semiconductor substrate 20; and a step for dividing the substrate into the second region 20B and the third region 20C by cleavage by applying a force along the second boundary line 22b from the rear side of the semiconductor substrate 20. <P>COPYRIGHT: (C)2012,JPO&INPIT |
