Method for avoiding avalanche breakdown caused by a lateral parasitic bipolar transistor in an MOS process,申请号EP20040024573-传众专利搜索

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发明名称	Method for avoiding avalanche breakdown caused by a lateral parasitic bipolar transistor in an MOS process
摘要
申请公布号	EP1524766(B1)	申请公布日期	2012.06.20
申请号	EP20040024573	申请日期	2004.10.14
申请人	BROADCOM CORPORATION	发明人	BEHZAD, ARYA
分类号	H03F1/22	主分类号	H03F1/22
代理机构		代理人
主权项
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