DEPOSITION OF METAL FILMS ON DIFFUSION LAYERS BY ATOMIC LAYER DEPOSITION AND ORGANOMETALLIC PRECURSOR COMPLEXES THEREFOR

摘要

Organometallic precursor complexes containing a metal and ligands containing electron withdrawing groups are disclosed. The complexes are adapted to undergo exothermic adsorption on a fully passivated diffusion barrier layer and on a metal layer deposited on the diffusion barrier layer and to undergo exothermic reduction on the diffusion barrier layer and the metal layer. The metal is preferably copper. Use of the complexes in atomic layer deposition is also disclosed.