发明名称 |
Method for manufacturing a FinFET device comprising a mask to define a gate perimeter and another mask to define fin regions |
摘要 |
A method for manufacturing a FinFET device includes: providing a substrate having a mask disposed thereon; covering portions of the mask to define a perimeter of a gate region; removing uncovered portions of the mask to expose the substrate; covering a part of the exposed substrate with another mask to define at least one fin region; forming the at least one fin and the gate region through both masks and the substrate, the gate region having side walls; disposing insulating layers around the at least one fin and onto the side walls; disposing a conductive material into the gate region and onto the insulating layers to form a gate electrode, and then forming source and drain regions. |
申请公布号 |
US8202780(B2) |
申请公布日期 |
2012.06.19 |
申请号 |
US20090533389 |
申请日期 |
2009.07.31 |
申请人 |
REN ZHIBIN;WANG XINHUI;CHAN KEVIN K.;ZHANG YING;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
REN ZHIBIN;WANG XINHUI;CHAN KEVIN K.;ZHANG YING |
分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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