PURPOSE: A semiconductor laser diode having a micro lens is provided to eliminate a problem due to contractile-force in both ends of a micro lens by inserting UV epoxy between a micro lens support and both ends of a micro lens. CONSTITUTION: A high power laser diode array chip(10) emits laser diode light from a laser diode irradiation area by receiving electrical energy. A micro lens(100) forms the laser light emitted from the laser diode array chip to be horizontal. A heat sink(50) absorbs the heat from the laser diode array chip. A dielectric pad(30) is formed on the heat sink. An electrode plate(40) is formed on the dielectric pad. An electrical wire(20) connects the electrode plate and the laser diode array chip formed on the dielectric pad. An integrated heat sink-micro lens support(250) safely supports the micro lens.
申请公布号
KR20120064509(A)
申请公布日期
2012.06.19
申请号
KR20100125780
申请日期
2010.12.09
申请人
AGENCY FOR DEFENSE DEVELOPMENT
发明人
CHOI, HYUN JIN;LEE, JUNG HWAN;KANG, EUNG CHEOL;UM, KI YOUNG